Comparison of thermal, line-source electron beam and CW laser annealing for the fabrication of ErSi/sub 2/ Schottky barrier on Si

Conference · Sat Jan 01 04:00:00 EST 1983

OSTI ID:5551709

Wu, C S; Scott, D M; Lau, S S; Wakita, A; Sigmon, T W; Knapp, J A; Picraux, S T

ErSi/sub 2/ contacts formed by reacting Er with single crystal silicon using conventional furnace heat treatment are dominated by pits. Recently rapid electron and laser beam heating have been used to form pit-free ErSi/sub 2/ layers on Si by reacting Er with the Si substrate. For this investigation we studied the electrical properties of erbium silicide/Si contact prepared by thermal, laser and electron beam annealing. We prepared and annealed three types of samples; (I) Er(600A)/Si and (III) Si(900A)/Er(600A)/Si. The barrier height of the pit-free thermal annealed samples (type III) was approx. 0.78 eV. All laser and e-beam annealed samples were observed to be pit free. The barrier heights for the laser annealed samples varied from approx. 0.63 eV for type I samples to approx. 0.77 eV for type III samples. The eV (type I and II) and approx. 0.77 eV for type III. The barrier heights of beam processed diodes shifted towards the 0.78 eV range upon post-annealing. We model these results in terms of defects created at the ErSi/sub 2/-Si interface.

• Research Organization: California Univ., San Diego, La Jolla (USA); Stanford Univ., CA (USA). Stanford Electronics Labs.; Sandia National Labs., Albuquerque, NM (USA)
• DOE Contract Number: AC04-76DP00789
• OSTI ID: 5551709
• Report Number(s): SAND-83-1400C; CONF-831174-11; ON: DE84003105
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
420800* -- Engineering-- Electronic Circuits & Devices-- (-1989)
ANNEALING
BEAMS
ELECTRICAL PROPERTIES
ELECTROMAGNETIC RADIATION
ELECTRON BEAMS
ELEMENTS
ERBIUM COMPOUNDS
ERBIUM SILICIDES
FABRICATION
HEAT TREATMENTS
LASER RADIATION
LEPTON BEAMS
PARTICLE BEAMS
PHYSICAL PROPERTIES
RADIATIONS
RARE EARTH COMPOUNDS
SCHOTTKY BARRIER DIODES
SEMICONDUCTOR DEVICES
SEMICONDUCTOR DIODES
SEMIMETALS
SILICIDES
SILICON
SILICON COMPOUNDS