Positron annihilation studies of silicon-rich SiO{sub 2} produced by high dose ion implantation
- Department of Applied Physics, Brookhaven National Laboratory, Upton, New York 11973 (United States)
- Department of Physics, Brookhaven National Laboratory, Upton, New York 11973 (United States)
- Department of Chemistry, Brookhaven National Laboratory, Upton, New York 11973 (United States)
- Dipartimento di Fisica, Universita degli Studi di Modena, Modena (Italy)
Positron annihilation spectroscopy (PAS) is used to study Si-rich SiO{sub 2} samples prepared by implantation of Si (160 keV) ions at doses in the range 3{times}10{sup 16}{endash}3{times}10{sup 17} cm{sup {minus}2} and subsequent thermal annealing at high temperature (up to 1100{degree}C). Samples implanted at doses higher than 5{times}10{sup 16} cm{sup {minus}2} and annealed above 1000{degree}C showed a PAS spectrum with an annihilation peak broader than the unimplanted sample. We discuss how these results are related to the process of silicon precipitation inside SiO{sub 2}. {copyright} {ital 1997 American Institute of Physics.}
- OSTI ID:
- 450188
- Journal Information:
- Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 4 Vol. 70; ISSN APPLAB; ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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