Defects in 30 keV Er{sup +}-implanted SiO{sub 2}/Si studied by positron annihilation and cathodoluminescence
Defects in SiO{sub 2}(48nm)/Si induced by 30 keV Er ion implantation were studied by positron annihilation. Depth-selective information on defects for samples implanted with doses of 3.0{times}10{sup 14} and 1.5{times}10{sup 15}Er/cm{sup 2} was obtained by a variable-energy positron beam by measuring Doppler broadening of positron annihilation {gamma} rays as a function of incident positron energy. Comparison of the results by Doppler broadening with those by electron spin resonance after annealing indicates that the types of defects (which predominantly exist in the SiO{sub 2} layer) depend on implantation dose. The annealing temperature dependence of positron data is compared with that of the cathodoluminescence intensity at 1.54 {mu}m, and the possible effect of defects on luminescence intensity is discussed. {copyright} 2001 American Institute of Physics.
- Sponsoring Organization:
- (US)
- OSTI ID:
- 40204358
- Journal Information:
- Journal of Applied Physics, Vol. 90, Issue 1; Other Information: DOI: 10.1063/1.1371948; Othernumber: JAPIAU000090000001000237000001; 073112JAP; PBD: 1 Jul 2001; ISSN 0021-8979
- Publisher:
- The American Physical Society
- Country of Publication:
- United States
- Language:
- English
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