Defects in 30 keV Er{sup +}-implanted SiO{sub 2}/Si studied by positron annihilation and cathodoluminescence

Journal Article · Sun Jul 01 04:00:00 EDT 2001 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.1371948· OSTI ID:40204358

Hirata, K; Arai, H; Kawasuso, A; Sekiguchi, T; Kobayashi, Y; Okada, S

Defects in SiO{sub 2}(48nm)/Si induced by 30 keV Er ion implantation were studied by positron annihilation. Depth-selective information on defects for samples implanted with doses of 3.0{times}10{sup 14} and 1.5{times}10{sup 15}Er/cm{sup 2} was obtained by a variable-energy positron beam by measuring Doppler broadening of positron annihilation {gamma} rays as a function of incident positron energy. Comparison of the results by Doppler broadening with those by electron spin resonance after annealing indicates that the types of defects (which predominantly exist in the SiO{sub 2} layer) depend on implantation dose. The annealing temperature dependence of positron data is compared with that of the cathodoluminescence intensity at 1.54 {mu}m, and the possible effect of defects on luminescence intensity is discussed. {copyright} 2001 American Institute of Physics.

• Sponsoring Organization: (US)
• OSTI ID: 40204358
• Journal Information: Journal of Applied Physics, Journal Name: Journal of Applied Physics Journal Issue: 1 Vol. 90; ISSN 0021-8979
• Publisher: The American Physical Society
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ANNIHILATION
CATHODOLUMINESCENCE
DEFECTS
DOPPLER BROADENING
ELECTRON SPIN RESONANCE
ION IMPLANTATION
POSITRON BEAMS
POSITRONS
TEMPERATURE DEPENDENCE