Characterization of silicon implanted SiO{sub 2} layers using positron annihilation spectroscopy
Conference
·
OSTI ID:100082
- Brookhaven National Lab., Upton, NY (United States)
- Politecnico di Milano, Milan (Italy)
- Montedison SpA, Novara (Italy). Ist. di Ricerche G. Donegani
Silicon implanted thermal SiO{sub 2} layers were studied using depth-resolved positron annihilation spectroscopy (PAS) and transmission electron microscopy (TEM). TEM observations show the presence of silicon nanocrystals (Si{sub nc}) in the region between 200 nm and 200 nm. The defect annealing behavior is studied by means of PAS. For 1000{degrees}C annealed samples at a depth for which Si{sub nc} are observed, a distinctive PAS signal is detected and ascribed to the Si{sub nc}/SiO{sub 2} interface.
- Research Organization:
- Brookhaven National Lab., Upton, NY (United States)
- Sponsoring Organization:
- USDOE, Washington, DC (United States)
- DOE Contract Number:
- AC02-76CH00016
- OSTI ID:
- 100082
- Report Number(s):
- BNL--61993; CONF-9505167--1; ON: DE95016009
- Country of Publication:
- United States
- Language:
- English
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