SiO/sub 2//Si interface probed with a variable-energy positron beam
The annihilation characteristics of a monoenergetic beam of positrons, after implantation in Si with a 350-nm overlayer of SiO/sub 2/, were measured as a function of mean implantation depth. Positrons implanted overlapping the SiO/sub 2//Si interface were observed to decay from a state with properties distinctively different from the state in bulk Si and the thermally grown SiO/sub 2/, i.e., a positron interface state. The momentum distribution of the annihilating positron-electron pair, as observed in the Doppler broadening of the annihilation line, is much broader for this state than for either bulk Si or SiO/sub 2/, in contrast to previously observed localized positron states in solids and at surfaces which show a narrower distribution.
- Research Organization:
- Brookhaven National Laboratory, Upton, New York 11973
- DOE Contract Number:
- AC02-76CH00016
- OSTI ID:
- 6230044
- Journal Information:
- Appl. Phys. Lett.; (United States), Journal Name: Appl. Phys. Lett.; (United States) Vol. 51:13; ISSN APPLA
- Country of Publication:
- United States
- Language:
- English
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75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ANNIHILATION
ANTILEPTONS
ANTIMATTER
ANTIPARTICLES
BASIC INTERACTIONS
BEAMS
CHALCOGENIDES
COLLISIONS
DOPPLER BROADENING
ELECTROMAGNETIC INTERACTIONS
ELECTRONIC STRUCTURE
ELEMENTARY PARTICLES
ELEMENTS
FERMIONS
INTERACTIONS
INTERFACES
LEPTON BEAMS
LEPTONS
LINE BROADENING
MINERALS
OXIDE MINERALS
OXIDES
OXYGEN COMPOUNDS
PARTICLE BEAMS
POSITRON BEAMS
POSITRON COLLISIONS
POSITRONS
SEMIMETALS
SILICA
SILICON
SILICON COMPOUNDS
SILICON OXIDES