Positron annihilation at the Si/SiO sub 2 interface

Journal Article · Tue Dec 31 23:00:00 EST 1991 · Journal of Applied Physics; (United States)

DOI:https://doi.org/10.1063/1.350694· OSTI ID:5504947

Leung, T C ^[1]; Weinberg, Z A ^[2]; Asoka-Kumar, P; Nielsen, B ^[1]; Rubloff, G W ^[2]; Lynn, K G ^[1]

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1. Brookhaven National Laboratory, Upton, New York 11973 (United States)
2. IBM Research Division, T. J. Watson Research Center, Yorktown Heights, New York 10598 (United States)

Variable-energy positron annihilation depth-profiling has been applied to the study of the Si/SiO{sub 2} interface in Al-gate metal-oxide-semiconductor (MOS) structures. For both {ital n}- and {ital p}-type silicon under conditions of negative gate bias, the positron annihilation {ital S}-factor characteristic of the interface ({ital S}{sub int}) is substantially modified. Temperature and annealing behavior, combined with known MOS physics, suggest strongly that {ital S}{sub int} depends directly on holes at interface states or traps at the Si/SiO{sub 2} interface.

• DOE Contract Number: AC02-76CH00016
• OSTI ID: 5504947
• Journal Information: Journal of Applied Physics; (United States), Journal Name: Journal of Applied Physics; (United States) Vol. 71:1; ISSN 0021-8979; ISSN JAPIA
• Country of Publication: United States
• Language: English

Related Subjects

665000* -- Physics of Condensed Matter-- (1992-)
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
BEAMS
CHALCOGENIDES
COLLISIONS
CRYSTAL DEFECTS
CRYSTAL DOPING
CRYSTAL STRUCTURE
ELEMENTS
HOLES
INTERFACES
LEPTON BEAMS
OXIDES
OXYGEN COMPOUNDS
PARTICLE BEAMS
POSITRON BEAMS
SEMIMETALS
SILICON
SILICON COMPOUNDS
SILICON OXIDES
TRAPPING