SiO sub 2 /Si interface properties using positrons

Journal Article · Sun Sep 15 04:00:00 EDT 1991 · Physical Review, B: Condensed Matter; (United States)

DOI:https://doi.org/10.1103/PhysRevB.44.5885· OSTI ID:5170380

Asoka-Kumar, P; Lynn, K G; Leung, T C; Nielsen, B ^[1]; Rubloff, G W; Weinberg, Z A ^[2]

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1. Brookhaven National Laboratory, Upton, New York (USA)
2. IBM Research Division, Thomas J. Watson Research Center, Yorktown Heights, New York (USA)

Positron-annihilation spectra are used to identify interface states in a 110-nm-thick, thermally grown (dry, no HCl) SiO{sub 2}/Si(100) system. A normalized shape parameter ({ital S} parameter) is used to characterize the positron-annihilation spectra. The interface-state-density variation under a low-temperature annealing (20 {degree}C--500 {degree}C) is shown to be correlated with the variation in the intensity of the interface shape parameter. Activation and passivation of interface states by atomic hydrogen are demonstrated by repeated {ital in} {ital situ} hydrogen exposure and vacuum anneal. The present study shows that characterizing the interface states with positron-annihilation techniques opens an avenue for studies involving interface states without the need for a gate electrode.

• DOE Contract Number: AC02-76CH00016
• OSTI ID: 5170380
• Journal Information: Physical Review, B: Condensed Matter; (United States), Journal Name: Physical Review, B: Condensed Matter; (United States) Vol. 44:11; ISSN PRBMD; ISSN 0163-1829
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360603* -- Materials-- Properties
ANNEALING
ANTILEPTONS
ANTIMATTER
ANTIPARTICLES
CHALCOGENIDES
ELEMENTARY PARTICLES
ELEMENTS
FERMIONS
HEAT TREATMENTS
HIGH TEMPERATURE
HYDROGEN
INTERFACES
LEPTONS
MATTER
MEDIUM TEMPERATURE
NONMETALS
OXIDES
OXYGEN COMPOUNDS
PASSIVATION
POSITRONS
SEMIMETALS
SILICON
SILICON COMPOUNDS
SILICON OXIDES
TEMPERATURE DEPENDENCE