Study of hydrogen interaction with SiO sub 2 /Si(100) system using positrons

Journal Article · Wed May 01 04:00:00 EDT 1991 · Journal of Applied Physics; (USA)

DOI:https://doi.org/10.1063/1.348872· OSTI ID:5557402

Asoka-Kumar, P; Lynn, K G; Leung, T C; Nielsen, B; Wu, X Y ^[1]

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1. Department of Physics, Brookhaven National Laboratory, Upton, New York, 11973. (USA)

We describe positron annihilation studies of SiO{sub 2}/Si(100) structures having 100-nm-thick oxide grown by plasma enhanced chemical vapor deposition. A normalized shape parameter is used to characterize the positron annihilation spectra. Activation and passivation of interface states by atomic hydrogen are demonstrated by repeated vacuum anneal and atomic hydrogen exposure. Hydrogen activation energy is derived for one of the samples as 2.02{plus minus}0.07 eV.

• DOE Contract Number: AC02-76CH00016
• OSTI ID: 5557402
• Journal Information: Journal of Applied Physics; (USA), Journal Name: Journal of Applied Physics; (USA) Vol. 69:9; ISSN 0021-8979; ISSN JAPIA
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360605* -- Materials-- Radiation Effects
656003 -- Condensed Matter Physics-- Interactions between Beams & Condensed Matter-- (1987-)
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ACTIVATION ENERGY
ANNEALING
ANNIHILATION
ATOM TRANSPORT
BASIC INTERACTIONS
BNL
CHALCOGENIDES
CHANNELING
CHEMICAL COATING
CHEMICAL REACTIONS
CHEMICAL VAPOR DEPOSITION
DEPOSITION
ELECTROMAGNETIC INTERACTIONS
ELEMENTS
ENERGY
HEAT TREATMENTS
HYDROGENATION
INTERACTIONS
MINERALS
NATIONAL ORGANIZATIONS
NEUTRAL-PARTICLE TRANSPORT
OXIDE MINERALS
OXIDES
OXYGEN COMPOUNDS
PARTICLE INTERACTIONS
POSITRON CHANNELING
RADIATION TRANSPORT
SEMIMETALS
SILICA
SILICON
SILICON COMPOUNDS
SILICON OXIDES
SURFACE COATING
US AEC
US DOE
US ERDA
US ORGANIZATIONS