Study of SiO[sub 2]-Si and metal-oxide-semiconductor structures using positrons

Journal Article · Fri Jan 01 04:00:00 EST 1993 · Journal of Applied Physics; (United States)

DOI:https://doi.org/10.1063/1.353879· OSTI ID:6771352

Leung, T C; Asoka-Kumar, P; Nielsen, B; Lynn, K G ^[1]

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1. Brookhaven National Laboratory, Upton, New York 11973 (United States)

Studies of SiO[sub 2]-Si and metal-oxide-semiconductor (MOS) structures using positrons are summarized and a concise picture of the present understanding of positrons in these systems is provided. Positron annihilation line-shape [ital S] data are presented as a function of the positron incident energy, gate voltage, and annealing, and are described with a diffusion-annihilation equation for positrons. The data are compared with electrical measurements. Distinct annihilation characteristics were observed at the SiO[sub 2]-Si interface and have been studied as a function of bias voltage and annealing conditions. The shift of the centroid (peak) of [gamma]-ray energy distributions in the depletion region of the MOS structures was studied as a function of positron energy and gate voltage, and the shifts are explained by the corresponding variations in the strength of the electric field and thickness of the depletion layer. The potential role of the positron annihilation technique as a noncontact, nondestructive, and depth-sensitive characterization tool for the technologically important, deeply buried interface is shown.

• DOE Contract Number: AC02-76CH00016
• OSTI ID: 6771352
• Journal Information: Journal of Applied Physics; (United States), Journal Name: Journal of Applied Physics; (United States) Vol. 73:1; ISSN JAPIAU; ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360606* -- Other Materials-- Physical Properties-- (1992-)
665300 -- Interactions Between Beams & Condensed Matter-- (1992-)
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ANNEALING
ANNIHILATION
ANTILEPTONS
ANTIMATTER
ANTIPARTICLES
BASIC INTERACTIONS
CHALCOGENIDES
CHEMICAL ANALYSIS
ELECTROMAGNETIC INTERACTIONS
ELEMENTARY PARTICLES
ELEMENTS
FERMIONS
HEAT TREATMENTS
INTERACTIONS
INTERFACES
JUNCTIONS
LEPTONS
MATTER
NONDESTRUCTIVE ANALYSIS
OXIDES
OXYGEN COMPOUNDS
PARTICLE INTERACTIONS
POSITRONS
SEMICONDUCTOR JUNCTIONS
SEMIMETALS
SILICON
SILICON COMPOUNDS
SILICON OXIDES