Positron annihilation studies in the field induced depletion regions of metal-oxide-semiconductor structures

Journal Article · Mon Jun 01 04:00:00 EDT 1992 · Journal of Applied Physics; (United States)

DOI:https://doi.org/10.1063/1.350540· OSTI ID:7297717

Asoka-Kumar, P; Leung, T C; Lynn, K G; Nielsen, B; Forcier, M P ^[1]; Weinberg, Z A; Rubloff, G W ^[2]

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1. Brookhaven National Laboratory, Upton, New York 11973 (United States)
2. IBM Research Division, T. J. Watson Research Center, Yorktown Heights, New York 10598 (United States)

The centroid shifts of positron annihilation spectra are reported from the depletion regions of metal-oxide-semiconductor (MOS) capacitors at room temperature and at 35 K. The centroid shift measurement can be explained using the variation of the electric field strength and depletion layer thickness as a function of the applied gate bias. An estimate for the relevant MOS quantities is obtained by fitting the centroid shift versus beam energy data with a steady-state diffusion-annihilation equation and a derivative-gaussian positron implantation profile. Inadequacy of the present analysis scheme is evident from the derived quantities and alternate methods are required for better predictions.

• DOE Contract Number: AC02-76CH00016
• OSTI ID: 7297717
• Journal Information: Journal of Applied Physics; (United States), Journal Name: Journal of Applied Physics; (United States) Vol. 71:11; ISSN 0021-8979; ISSN JAPIA
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360606 -- Other Materials-- Physical Properties-- (1992-)
665100* -- Nuclear Techniques in Condensed Matter Physics -- (1992-)
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ANNIHILATION
BASIC INTERACTIONS
COLLISIONS
DEPLETION LAYER
ELECTROMAGNETIC INTERACTIONS
INTERACTIONS
JUNCTIONS
LAYERS
PARTICLE INTERACTIONS
POSITRON COLLISIONS
SEMICONDUCTOR JUNCTIONS
SPECTRAL SHIFT
TEMPERATURE RANGE
TEMPERATURE RANGE 0013-0065 K
TEMPERATURE RANGE 0273-0400 K