Positron annihilation studies in the field induced depletion regions of metal-oxide-semiconductor structures
- Brookhaven National Laboratory, Upton, New York 11973 (United States)
- IBM Research Division, T. J. Watson Research Center, Yorktown Heights, New York 10598 (United States)
The centroid shifts of positron annihilation spectra are reported from the depletion regions of metal-oxide-semiconductor (MOS) capacitors at room temperature and at 35 K. The centroid shift measurement can be explained using the variation of the electric field strength and depletion layer thickness as a function of the applied gate bias. An estimate for the relevant MOS quantities is obtained by fitting the centroid shift versus beam energy data with a steady-state diffusion-annihilation equation and a derivative-gaussian positron implantation profile. Inadequacy of the present analysis scheme is evident from the derived quantities and alternate methods are required for better predictions.
- DOE Contract Number:
- AC02-76CH00016
- OSTI ID:
- 7297717
- Journal Information:
- Journal of Applied Physics; (United States), Journal Name: Journal of Applied Physics; (United States) Vol. 71:11; ISSN 0021-8979; ISSN JAPIA
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
360606 -- Other Materials-- Physical Properties-- (1992-)
665100* -- Nuclear Techniques in Condensed Matter Physics -- (1992-)
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ANNIHILATION
BASIC INTERACTIONS
COLLISIONS
DEPLETION LAYER
ELECTROMAGNETIC INTERACTIONS
INTERACTIONS
JUNCTIONS
LAYERS
PARTICLE INTERACTIONS
POSITRON COLLISIONS
SEMICONDUCTOR JUNCTIONS
SPECTRAL SHIFT
TEMPERATURE RANGE
TEMPERATURE RANGE 0013-0065 K
TEMPERATURE RANGE 0273-0400 K