Centroid shift of. gamma. rays from positron annihilation in the depletion region of metal-oxide-semiconductor structures

Journal Article · Sun Jan 06 23:00:00 EST 1991 · Applied Physics Letters; (USA)

DOI:https://doi.org/10.1063/1.104399· OSTI ID:6096986

Leung, T C; Kong, Y; Lynn, K G; Nielsen, B ^[1]; Weinberg, Z A; Rubloff, G W ^[2]

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1. Brookhaven National Laboratory, Upton, New York 11973 (US)
2. IBM Research Division, T. J. Watson Research Center, Yorktown Heights, New York 10598 (US)

Using metal-oxide-semiconductor (MOS) structures, the shift of centroid (peak) of {gamma}-ray energy distributions emitted from positron annihilation has been measured as a function of incident positron energy. The Doppler centroid shift was found to be consistent with the positron motion in the MOS depletion region. The results are described by a one-dimensional positron diffusion model, and provide information on effective'' positron diffusion length under applied field.

• DOE Contract Number: AC02-76CH00016
• OSTI ID: 6096986
• Journal Information: Applied Physics Letters; (USA), Journal Name: Applied Physics Letters; (USA) Vol. 58:1; ISSN APPLA; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

656003* -- Condensed Matter Physics-- Interactions between Beams & Condensed Matter-- (1987-)
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ALUMINIUM
ANNIHILATION
BASIC INTERACTIONS
CHALCOGENIDES
CHANNELING
DEPLETION LAYER
ELECTRIC FIELDS
ELECTROMAGNETIC INTERACTIONS
ELEMENTS
GAMMA SPECTRA
INTERACTIONS
LAYERS
METALS
MINERALS
OXIDE MINERALS
OXIDES
OXYGEN COMPOUNDS
POSITRON CHANNELING
SEMIMETALS
SILICA
SILICON
SILICON COMPOUNDS
SILICON OXIDES
SPECTRA