Positron studies of metal-oxide-semiconductor structures

Journal Article · Mon Mar 15 04:00:00 EST 1993 · Journal of Applied Physics; (United States)

DOI:https://doi.org/10.1063/1.353029· OSTI ID:6838024

Au, H L; Asoka-Kumar, P; Nielsen, B; Lynn, K G ^[1]

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1. Brookhaven National Laboratory, Upton, New York 11973 (United States)

Positron annihilation spectroscopy provides a new probe to study the properties of interface traps in metal-oxide semiconductors (MOS). Using positrons, we have examined the behavior of the interface traps as a function of gate bias. We propose a simple model to explain the positron annihilation spectra from the interface region of a MOS capacitor.

• DOE Contract Number: AC02-76CH00016
• OSTI ID: 6838024
• Journal Information: Journal of Applied Physics; (United States), Journal Name: Journal of Applied Physics; (United States) Vol. 73:6; ISSN JAPIAU; ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360606* -- Other Materials-- Physical Properties-- (1992-)
ANNIHILATION
ANTILEPTONS
ANTIMATTER
ANTIPARTICLES
BASIC INTERACTIONS
CHALCOGENIDES
ELECTROMAGNETIC INTERACTIONS
ELEMENTARY PARTICLES
ELEMENTS
FERMIONS
INTERACTIONS
INTERFACES
LEPTONS
MATTER
OXIDES
OXYGEN COMPOUNDS
PARTICLE INTERACTIONS
POSITRONS
SEMIMETALS
SILICON
SILICON COMPOUNDS
SILICON OXIDES
TRAPS