Visible light emission from silicon implanted and annealed SiO{sub 2}layers

Journal Article · Sun Jun 01 00:00:00 EDT 1997 · Journal of the Electrochemical Society

DOI:https://doi.org/10.1149/1.1837764· OSTI ID:516910

Ghislotti, G; Nielsen, B; Asoka-Kumar, P; Lynn, K G; Di Mauro, L F ^[1]; Bottani, C E ^[2]; Corni, F; Tonini, R; Ottaviani, G P ^[3]

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1. Brookhaven National Lab., Upton, NY (United States)
2. Politecnico di Milano, Milan (Italy). Dipt. di Ingegneria Nucleare
3. Univ. di Modena (Italy). Dept. di Fisica

Silicon implanted and annealed SiO{sub 2} layers are studied using photoluminescence (PL) and positron annihilation spectroscopy (PAS). Two PL emission bands are observed. A band centered at 560 nm is present in as-implanted samples and it is still observed after 1,000 C annealing. The emission time is fast. A second band centered at 780 nm is detected after 1,000 C annealing. The intensity of the 780 nm band further increased when hydrogen annealing was performed. The emission time is long (1 {micro}s to 0.2 ms). PAS results show that defects produced by implantation anneal at 600 C. Based on the annealing behavior and on the emission times, the origin of the two bands is discussed.

• Sponsoring Organization: USDOE
• OSTI ID: 516910
• Journal Information: Journal of the Electrochemical Society, Journal Name: Journal of the Electrochemical Society Journal Issue: 6 Vol. 144; ISSN JESOAN; ISSN 0013-4651
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ANNEALING
CRYSTAL DEFECTS
ION IMPLANTATION
PHOTOEMISSION
SILICON IONS
SILICON OXIDES
VISIBLE RADIATION