Annealing studies of visible light emission from silicon nanocrystals produced by implantation
Conference
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OSTI ID:456357
- and others
The annealing behavior of silicon implanted SiO{sub 2} layers is studied using continuous and time-gated photoluminescence (PL). Two PL emission bands are observed. A band centered at 560 nm is present in as implanted samples and it is still observed after 1000 {degrees}C annealing. The emission time is fast (0.2 -2 ns). A second band centered at 780 nm further increases when hydrogen annealing was performed. The emission time is long (1 {mu}s - 0.3 ms).
- Research Organization:
- Brookhaven National Lab., Upton, NY (United States)
- Sponsoring Organization:
- USDOE Office of Energy Research, Washington, DC (United States)
- DOE Contract Number:
- AC02-76CH00016
- OSTI ID:
- 456357
- Report Number(s):
- BNL--64000; CONF-961202--98; ON: DE97004076
- Country of Publication:
- United States
- Language:
- English
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