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Defects in MeV Si-implanted Si probed with positrons

Journal Article · · Journal of Applied Physics; (United States)
DOI:https://doi.org/10.1063/1.354813· OSTI ID:6344957
 [1];  [2];  [3];  [4]
  1. Department of Applied Science, Brookhaven National Laboratory, Upton, New York 11973 (United States)
  2. Solid State Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831 (United States)
  3. Physics Department, Brookhaven National Laboratory, Upton, New York 11973 (United States)
  4. Physics Department and Department of Applied Science, Brookhaven National Laboratory, Upton, New York 11973 (United States)
+ Show Author Affiliations

Vacancy-type defects produced by implantation of MeV doses of Si ions (10[sup 11]--10[sup 15] atoms/cm[sup 2]) at room temperature have been probed using depth-resolved positron annihilation spectroscopy. The defect (divacancy) concentration increases linearly with dose for low doses ([lt]10[sup 12] Si/cm[sup 2]). [ital In] [ital situ] isochronal annealing was followed for oxygen-containing Si (10 ppm) and oxygen- free'' Si implanted to doses (5[times]10[sup 12] and 5[times]10[sup 14] Si/cm[sup 2]). Two main annealing stages were observed at the same temperatures in the studied samples in spite of significant differences in doses and oxygen content. In the first stage ([similar to]200 [degree]C) a significant fraction of divacancies was observed to form large vacancy clusters. These clusters were removed in the second stage ([similar to]675 [degree]C) after which the oxygen-free samples returned to pre-irradiation conditions, whereas oxygen-defect complexes were formed in the oxygen-containing samples.

DOE Contract Number:
AC02-76CH00016; AC05-84OR21400
OSTI ID:
6344957
Journal Information:
Journal of Applied Physics; (United States), Journal Name: Journal of Applied Physics; (United States) Vol. 74:3; ISSN JAPIAU; ISSN 0021-8979
Country of Publication:
United States
Language:
English

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Related Subjects

36 MATERIALS SCIENCE
360605* -- Materials-- Radiation Effects
665300 -- Interactions Between Beams & Condensed Matter-- (1992-)
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ANNEALING
ANNIHILATION
BASIC INTERACTIONS
BEAMS
CHARGED PARTICLES
CRYSTAL DEFECTS
CRYSTAL STRUCTURE
ELECTROMAGNETIC INTERACTIONS
ELEMENTS
ENERGY RANGE
HEAT TREATMENTS
INTERACTIONS
ION IMPLANTATION
IONS
LEPTON BEAMS
MEV RANGE
MEV RANGE 01-10
PARTICLE BEAMS
PARTICLE INTERACTIONS
POINT DEFECTS
POSITRON BEAMS
SEMIMETALS
SILICON
SILICON IONS
TEMPERATURE RANGE
TEMPERATURE RANGE 0400-1000 K
USES
VACANCIES