Ion beam induced diffusion and crystallization in high dose Er implanted Si

Conference · Mon Jan 01 00:00:00 EST 1990

OSTI ID:6480207

Golanski, A ^[1]; Christie, W H; Galloway, M D; Park, J L; Pennycook, S J; Poker, D B; Moore, J L; Harmon, H E; White, C W ^[2]

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1. Centre National d'Etudes des Telecommunications (CNET), 38 - Meylan (France)
2. Oak Ridge National Lab., TN (USA)

High doses (1{times}10{sup 16}{minus}1{times}10{sup 17}/cm{sup 2}) of 145 keV and 175 keV Er+ ions were implanted into single-crystal Si using implantation temperatures (T{sub i}) between room temperature and 500{degree}C. Implanted samples were subsequently annealed using thermal annealing at 800{degree}C under vacuum as well as a 1 MeV As+ ion beam assisted annealing (IBAA) at 300{degree}C. During Er+ implantation, we find evidence for ion beam induced mobility for T{sub i} as low as 300{degree}C. A measurable redistribution of the implanted Er also occurs during the IBAA for Er doses greater than 5{times}10{sup 16}/cm{sup 2}. During Er+ implantation at T{sub i} >300{degree}C a polycrystalline ErSi{sub 2} phase is formed. For T{sub i} >400{degree}C the coherent precipitation of ErSi{sub 2} phase occurs within the crystalline Si matrix. During subsequent thermal annealing of samples implanted at T{sub i} >400{degree}C, the Er distribution narrows due to Ostwald ripening, and preferential alignment occurs to form a discontinuous buried layer of a single crystalline Er silicide. 16 refs., 7 figs.

• Research Organization: Oak Ridge National Lab., TN (USA)
• Sponsoring Organization: DOE/ER
• DOE Contract Number: AC05-84OR21400
• OSTI ID: 6480207
• Report Number(s): CONF-900936-19; ON: DE91002869
• Resource Relation: Conference: 7. international conference on ion beam modification of materials, Knoxville, TN (USA), 9-14 Sep 1990
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
36 MATERIALS SCIENCE
SILICON
CRYSTALLIZATION
ION IMPLANTATION
DIFFUSION
ERBIUM IONS
ION BEAMS
ION SOURCES
POLYCRYSTALS
SCHOTTKY EFFECT
BEAMS
CHARGED PARTICLES
CRYSTALS
ELEMENTS
IONS
PHASE TRANSFORMATIONS
SEMIMETALS
656003* - Condensed Matter Physics- Interactions between Beams & Condensed Matter- (1987-)
360601 - Other Materials- Preparation & Manufacture