Importance of ion energy on SEU in CMOS SRAMs

Technical Report · Sat Feb 28 23:00:00 EST 1998

DOI:https://doi.org/10.2172/645600· OSTI ID:645600

Dodd, P E; Shaneyfelt, M R; Sexton, F W; Hash, G L; Winokur, P S ^[1]; Musseau, O; Leray, J L ^[2]

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1. Sandia National Labs., Albuquerque, NM (United States)
2. CEA-DAM, Bruyeres-le-Chatel (France)

The single-event upset (SEU) responses of 16 Kbit to 1 Mbit SRAMs irradiated with low and high-energy heavy ions are reported. Standard low-energy heavy ion tests appear to be sufficiently conservative for technologies down to 0.5 {micro}m.

• Research Organization: Sandia National Labs., Albuquerque, NM (United States)
• Sponsoring Organization: USDOE, Washington, DC (United States)
• DOE Contract Number: AC04-94AL85000
• OSTI ID: 645600
• Report Number(s): SAND--98-0626C; CONF-980705--; ON: DE98005028; BR: DP0102022
• Country of Publication: United States
• Language: English

Related Subjects

44 INSTRUMENTATION
INCLUDING NUCLEAR AND PARTICLE DETECTORS
ERRORS
EXPERIMENTAL DATA
HEAVY IONS
PHYSICAL RADIATION EFFECTS
SEMICONDUCTOR STORAGE DEVICES
TESTING