Impact of technology trends on SEU in CMOS SRAMs
Journal Article
·
· IEEE Transactions on Nuclear Science
- Sandia National Labs., Albuquerque, NM (United States)
The impact of technology trends on the SEU hardness of epitaxial CMOS SRAMs is investigated using three-dimensional simulation. The authors study trends in SEU susceptibility with parameter variations across and within technology generations. Upset mechanisms for various strike locations and their dependence on gate-length scaling are explored. Such studies are useful for technology development and providing input for process and design decisions. An application of SEU simulation to the development of a 0.5-{micro}m radiation-hardened CMOS SRAM is presented.
- Research Organization:
- Sandia National Laboratory
- DOE Contract Number:
- AC04-94AL85000
- OSTI ID:
- 443050
- Report Number(s):
- CONF-960773--
- Journal Information:
- IEEE Transactions on Nuclear Science, Journal Name: IEEE Transactions on Nuclear Science Journal Issue: 6 Vol. 43; ISSN 0018-9499; ISSN IETNAE
- Country of Publication:
- United States
- Language:
- English
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