P-well or N-well CMOS technology for advanced SEU-hard SRAMs
Conference
·
OSTI ID:7245408
The decoupling resistances required for SEU hardening CMOS SRAMs of the 2..mu..m p-well and n-well technologies are compared. An advanced device-plus-circuit simulator has been used to illuminate the underpinings of why one technology is intrinsically more SEU tolerant than the other. 3 refs., 5 figs.
- Research Organization:
- Sandia National Labs., Albuquerque, NM (USA)
- DOE Contract Number:
- AC04-76DP00789
- OSTI ID:
- 7245408
- Report Number(s):
- SAND-88-0472C; CONF-880730-4; ON: DE88006845
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
42 ENGINEERING
420800* -- Engineering-- Electronic Circuits & Devices-- (-1989)
440200 -- Radiation Effects on Instrument Components
Instruments
or Electronic Systems
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
ALPHA PARTICLES
CHARGED PARTICLES
DESIGN
ELECTRIC CONDUCTIVITY
ELECTRICAL PROPERTIES
HARDENING
MATERIALS
MOS TRANSISTORS
N-TYPE CONDUCTORS
P-TYPE CONDUCTORS
PHYSICAL PROPERTIES
PHYSICAL RADIATION EFFECTS
RADIATION EFFECTS
RADIATION HARDENING
SEMICONDUCTOR DEVICES
SEMICONDUCTOR MATERIALS
TRANSISTORS
420800* -- Engineering-- Electronic Circuits & Devices-- (-1989)
440200 -- Radiation Effects on Instrument Components
Instruments
or Electronic Systems
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
ALPHA PARTICLES
CHARGED PARTICLES
DESIGN
ELECTRIC CONDUCTIVITY
ELECTRICAL PROPERTIES
HARDENING
MATERIALS
MOS TRANSISTORS
N-TYPE CONDUCTORS
P-TYPE CONDUCTORS
PHYSICAL PROPERTIES
PHYSICAL RADIATION EFFECTS
RADIATION EFFECTS
RADIATION HARDENING
SEMICONDUCTOR DEVICES
SEMICONDUCTOR MATERIALS
TRANSISTORS