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U.S. Department of Energy
Office of Scientific and Technical Information

P-well or N-well CMOS technology for advanced SEU-hard SRAMs

Conference ·
OSTI ID:7245408

The decoupling resistances required for SEU hardening CMOS SRAMs of the 2..mu..m p-well and n-well technologies are compared. An advanced device-plus-circuit simulator has been used to illuminate the underpinings of why one technology is intrinsically more SEU tolerant than the other. 3 refs., 5 figs.

Research Organization:
Sandia National Labs., Albuquerque, NM (USA)
DOE Contract Number:
AC04-76DP00789
OSTI ID:
7245408
Report Number(s):
SAND-88-0472C; CONF-880730-4; ON: DE88006845
Country of Publication:
United States
Language:
English