Impact of ion energy on single-event upset
- Sandia National Labs., Albuquerque, NM (United States)
- CEA-DRIF, Bruyeres le Chatel (France); and others
The impact of ion energy on single-event upset was investigated by irradiating CMOS SRAMs with low and high-energy heavy ions. A variety of CMOS SRAM technologies was studied, with gate lengths ranging from 1 to 0.5 {micro}m and integration densities from 16 Kbit to 1 Mbit. No significant differences were observed between the low and high-energy single-event upset response. The results are consistent with simulations of heavy-ion track structures that show the central core of the track structures are nearly identical for low and high-energy ions. Three-dimensional simulations confirm that charge collection is similar in two cases. Standard low-energy heavy ion tests are more cost-effective and appear to be sufficient for CMOS technologies down to 0.5 {micro}m. The authors discuss implications for deep submicron scaling, multiple-bit upsets, and hardness assurance.
- Research Organization:
- Sandia National Laboratory
- Sponsoring Organization:
- USDOE, Washington, DC (United States)
- DOE Contract Number:
- AC04-94AL85000
- OSTI ID:
- 323924
- Report Number(s):
- CONF-980705--
- Journal Information:
- IEEE Transactions on Nuclear Science, Journal Name: IEEE Transactions on Nuclear Science Journal Issue: 6Pt1 Vol. 45; ISSN 0018-9499; ISSN IETNAE
- Country of Publication:
- United States
- Language:
- English
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