Heavy ion microscopy of single event upsets in CMOS SRAMs

Conference · Wed Jun 01 00:00:00 EDT 1994 · IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (United States)

OSTI ID:6863812

Metzger, S; Dreute, J; Heinrich, W; Roecher, H ^[1]; Fischer, B E ^[2]; Harboe-Soerensen, R; Adams, L ^[3]

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1. Univ.-GH-Siegen (Germany)
2. Gesellschaft fuer Schwerionenforschung mbH, Darmstadt (Germany)
3. ESA-ESTEC, Noordwijk (Netherlands)

The single event upset (SEU) imaging has been applied at the GSI heavy ion microprobe to determine the sensitivity of integrated circuits (IC) to heavy ion irradiation. This method offers the possibility to directly image those parts of an IC which are sensitive to ion-induced malfunctions. By a 3-dimensional simulation of charge collection across p-n-micro-junctions the authors can predict SEU cross-sections. For a MHS65162 2k [times] 8bit CMOS SRAM they found two regions per bit with different sensitivity and measured a total cross-section of (71[+-]18)[mu]m[sup 2] for a bitflip per cell and simulated 60[mu]m[sup 2] with an argon beam of 1.4 MeV/nucl. (LET of 19.7 MeV/mg/cm[sup 2]).

• OSTI ID: 6863812
• Report Number(s): CONF-930953--
• Journal Information: IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (United States), Journal Name: IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (United States) Vol. 41:3Pt1; ISSN 0018-9499; ISSN IETNAE
• Country of Publication: United States
• Language: English

Related Subjects

440200* -- Radiation Effects on Instrument Components
Instruments
or Electronic Systems
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
CHARGED PARTICLES
DATA
ELECTRONIC CIRCUITS
EXPERIMENTAL DATA
FAILURES
HEAVY IONS
INFORMATION
INTEGRATED CIRCUITS
IONS
MEMORY DEVICES
MICROELECTRONIC CIRCUITS
NUMERICAL DATA
PHYSICAL RADIATION EFFECTS
RADIATION EFFECTS
SENSITIVITY