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CMOS IC fault models, physical defect coverage, and IDDQ testing [Book Chapter]

Conference · · Proceedings of the IEEE 1991 Custom Integrated Circuits Conference
 [1];  [2];  [1]
  1. Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States)
  2. Univ. of New Mexico, Albuquerque, NM (United States)

The development of the stuck-at fault (SAF) model is reviewed with emphasis on its relationship to CMOS integrated circuit (IC) technologies. The ability of the SAF model to represent common physical defects in CMOS ICs is evaluated. A test strategy for defect detection, which includes I/sub DDQ/ testing is presented.

Research Organization:
Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States)
Sponsoring Organization:
USDOE
DOE Contract Number:
AC04-76DP00789
OSTI ID:
6018784
Report Number(s):
SAND--90-2900C; CONF-910504--1; ON: DE91010579; ISBN: 0-7803-0015-7
Journal Information:
Proceedings of the IEEE 1991 Custom Integrated Circuits Conference, Journal Name: Proceedings of the IEEE 1991 Custom Integrated Circuits Conference
Publisher:
IEEE
Country of Publication:
United States
Language:
English

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