Radiation-hardened bulk CMOS technology

Conference · Sun Dec 31 23:00:00 EST 1978

OSTI ID:5969999

Dawes, Jr, W R; Habing, D H

The evolutionary development of a radiation-hardened bulk CMOS technology is reviewed. The metal gate hardened CMOS status is summarized, including both radiation and reliability data. The development of a radiation-hardened bulk silicon gate process which was successfully implemented to a commercial microprocessor family and applied to a new, radiation-hardened, LSI standard cell family is also discussed. The cell family is reviewed and preliminary characterization data is presented. Finally, a brief comparison of the various radiation-hardened technologies with regard to performance, reliability, and availability is made.

• Research Organization: Sandia Labs., Albuquerque, NM (USA)
• DOE Contract Number: EY-76-C-04-0789
• OSTI ID: 5969999
• Report Number(s): SAND-79-0714C; CONF-791040-1
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
420800* -- Engineering-- Electronic Circuits & Devices-- (-1989)
ELECTROMAGNETIC RADIATION
ELECTRONIC CIRCUITS
ELEMENTS
GAMMA RADIATION
HARDENING
INTEGRATED CIRCUITS
IONIZING RADIATIONS
MICROELECTRONIC CIRCUITS
MOS TRANSISTORS
PHYSICAL RADIATION EFFECTS
RADIATION EFFECTS
RADIATION HARDENING
RADIATIONS
RELIABILITY
SEMICONDUCTOR DEVICES
SEMIMETALS
SILICON
TRANSISTORS