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Title: Radiation-hardened bulk Si-gate CMOS microprocessor family

Abstract

RCA and Sandia Laboratories jointly developed a radiation-hardened bulk Si-gate CMOS technology which is used to fabricate the CDP-1800 series microprocessor family. Total dose hardness of 1 x 10/sup 6/ rads (Si) and transient upset hardness of 5 x 10/sup 8/ rads (Si)/sec with no latch up at any transient level was achieved. Radiation-hardened parts manufactured to date include the CDP-1802 microprocessor, the CDP-1834 ROM, the CDP-1852 8-bit I/O port, the CDP-1856 N-bit 1 of 8 decoder, and the TCC-244 256 x 4 Static RAM. The paper is divided into three parts. In the first section, the basic fundamentals of the non-hardened C/sup 2/L technology used for the CDP-1800 series microprocessor parts is discussed along with the primary reasons for hardening this technology. The second section discusses the major changes in the fabrication sequence that are required to produce radiation-hardened devices. The final section details the electrical performance characteristics of the hardened devices as well as the effects of radiation on device performance. Also included in this section is a discussion of the TCC-244 256 x 4 Static RAM designed jointly by RCA and Sandia Laboratories for this application.

Authors:
; ; ; ;
Publication Date:
Research Org.:
RCA Solid State Technology Center, Somerville, NJ (USA); Sandia Labs., Albuquerque, NM (USA)
OSTI Identifier:
6054040
Report Number(s):
SAND-79-1273C; CONF-790706-6
TRN: 79-019470
DOE Contract Number:  
EY-76-C-04-0789
Resource Type:
Conference
Resource Relation:
Conference: 1979 IEEE Annual conference on nuclear and space radiation effects, Santa Cruz, CA, USA, 17 Jul 1979
Country of Publication:
United States
Language:
English
Subject:
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY; MICROPROCESSORS; RADIATION HARDENING; MOSFET; PERFORMANCE; SPECIFICATIONS; HARDENING; MOS TRANSISTORS; PHYSICAL RADIATION EFFECTS; RADIATION EFFECTS; SEMICONDUCTOR DEVICES; TRANSISTORS; 440200* - Radiation Effects on Instrument Components, Instruments, or Electronic Systems

Citation Formats

Stricker, R E, Dingwall, A G.F., Cohen, S, Adams, J R, and Slemmer, W C. Radiation-hardened bulk Si-gate CMOS microprocessor family. United States: N. p., 1979. Web.
Stricker, R E, Dingwall, A G.F., Cohen, S, Adams, J R, & Slemmer, W C. Radiation-hardened bulk Si-gate CMOS microprocessor family. United States.
Stricker, R E, Dingwall, A G.F., Cohen, S, Adams, J R, and Slemmer, W C. Mon . "Radiation-hardened bulk Si-gate CMOS microprocessor family". United States. https://www.osti.gov/servlets/purl/6054040.
@article{osti_6054040,
title = {Radiation-hardened bulk Si-gate CMOS microprocessor family},
author = {Stricker, R E and Dingwall, A G.F. and Cohen, S and Adams, J R and Slemmer, W C},
abstractNote = {RCA and Sandia Laboratories jointly developed a radiation-hardened bulk Si-gate CMOS technology which is used to fabricate the CDP-1800 series microprocessor family. Total dose hardness of 1 x 10/sup 6/ rads (Si) and transient upset hardness of 5 x 10/sup 8/ rads (Si)/sec with no latch up at any transient level was achieved. Radiation-hardened parts manufactured to date include the CDP-1802 microprocessor, the CDP-1834 ROM, the CDP-1852 8-bit I/O port, the CDP-1856 N-bit 1 of 8 decoder, and the TCC-244 256 x 4 Static RAM. The paper is divided into three parts. In the first section, the basic fundamentals of the non-hardened C/sup 2/L technology used for the CDP-1800 series microprocessor parts is discussed along with the primary reasons for hardening this technology. The second section discusses the major changes in the fabrication sequence that are required to produce radiation-hardened devices. The final section details the electrical performance characteristics of the hardened devices as well as the effects of radiation on device performance. Also included in this section is a discussion of the TCC-244 256 x 4 Static RAM designed jointly by RCA and Sandia Laboratories for this application.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1979},
month = {1}
}

Conference:
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