Radiation hardening of CMOS technologies: an overview
Conference
·
· IEEE Trans. Nucl. Sci.; (United States)
OSTI ID:6633828
The current status of four technologies for manufacturing radiation-hardened complementary metal-oxide-semiconductor integrated circuits is presented. The technologies include both aluminum-gate and silicon-gate CMOS structures formed on bulk-silicon and on silicon-on-sapphire (SOS) substrates. The hardness level achieved on large-scale integrated circuits fabricated in each of these technologies is given. In addition some historical background is included.
- Research Organization:
- RCA Corp., Somerville, NJ
- OSTI ID:
- 6633828
- Conference Information:
- Journal Name: IEEE Trans. Nucl. Sci.; (United States) Journal Volume: NS-24:6
- Country of Publication:
- United States
- Language:
- English
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·
OSTI ID:7347521
Related Subjects
36 MATERIALS SCIENCE
360201 -- Ceramics
Cermets
& Refractories-- Preparation & Fabrication
440200* -- Radiation Effects on Instrument Components
Instruments
or Electronic Systems
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
ALUMINIUM COMPOUNDS
ALUMINIUM OXIDES
CHALCOGENIDES
ELECTRONIC CIRCUITS
HARDENING
HEAT TREATMENTS
INTEGRATED CIRCUITS
MANUFACTURING
MICROELECTRONIC CIRCUITS
MOS TRANSISTORS
OXIDES
OXYGEN COMPOUNDS
PHYSICAL RADIATION EFFECTS
RADIATION EFFECTS
RADIATION HARDENING
SEMICONDUCTOR DEVICES
SILICON COMPOUNDS
SILICON OXIDES
TRANSISTORS
360201 -- Ceramics
Cermets
& Refractories-- Preparation & Fabrication
440200* -- Radiation Effects on Instrument Components
Instruments
or Electronic Systems
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
ALUMINIUM COMPOUNDS
ALUMINIUM OXIDES
CHALCOGENIDES
ELECTRONIC CIRCUITS
HARDENING
HEAT TREATMENTS
INTEGRATED CIRCUITS
MANUFACTURING
MICROELECTRONIC CIRCUITS
MOS TRANSISTORS
OXIDES
OXYGEN COMPOUNDS
PHYSICAL RADIATION EFFECTS
RADIATION EFFECTS
RADIATION HARDENING
SEMICONDUCTOR DEVICES
SILICON COMPOUNDS
SILICON OXIDES
TRANSISTORS