Hardened CMOS/SOS LSI circuits for satellite applications
Conference
·
· IEEE Trans. Nucl. Sci.; (United States)
OSTI ID:6545818
- Hughes Aircraft Co., El Segundo, CA
The aluminum gate complementary MOS silicon on sapphire (CMOS/SOS) technology has been applied to the development of three radiation hardened large scale integration (LSI) microcircuits for satellite applications. The read control, write control, and multiplexer control LSI circuits range in complexity from 550 to more than 750 gates each (2000 to 3000 transistors). This discussion presents the results of the total dose radiation testing on these circuits to levels up to, and including, 1 x 10/sup 7/ rads (Si).
- OSTI ID:
- 6545818
- Journal Information:
- IEEE Trans. Nucl. Sci.; (United States), Journal Name: IEEE Trans. Nucl. Sci.; (United States) Vol. NS-24:6; ISSN IETNA
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
36 MATERIALS SCIENCE
360206 -- Ceramics
Cermets
& Refractories-- Radiation Effects
440200* -- Radiation Effects on Instrument Components
Instruments
or Electronic Systems
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
ALUMINIUM COMPOUNDS
ALUMINIUM OXIDES
CHALCOGENIDES
ELECTRONIC CIRCUITS
HARDENING
INTEGRATED CIRCUITS
MICROELECTRONIC CIRCUITS
MOS TRANSISTORS
OXIDES
OXYGEN COMPOUNDS
PERFORMANCE TESTING
PHYSICAL RADIATION EFFECTS
RADIATION EFFECTS
RADIATION HARDENING
SEMICONDUCTOR DEVICES
SILICON COMPOUNDS
SILICON OXIDES
TESTING
TRANSISTORS
360206 -- Ceramics
Cermets
& Refractories-- Radiation Effects
440200* -- Radiation Effects on Instrument Components
Instruments
or Electronic Systems
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
ALUMINIUM COMPOUNDS
ALUMINIUM OXIDES
CHALCOGENIDES
ELECTRONIC CIRCUITS
HARDENING
INTEGRATED CIRCUITS
MICROELECTRONIC CIRCUITS
MOS TRANSISTORS
OXIDES
OXYGEN COMPOUNDS
PERFORMANCE TESTING
PHYSICAL RADIATION EFFECTS
RADIATION EFFECTS
RADIATION HARDENING
SEMICONDUCTOR DEVICES
SILICON COMPOUNDS
SILICON OXIDES
TESTING
TRANSISTORS