Radiation-hardened CMOS/SOS LSI circuits
- Hughes Aircraft Co., Newport Beach, CA
The recently developed technology for building radiation-hardened CMOS/SOS devices has now been applied to the fabrication of LSI circuits. This paper describes and presents results on three different circuits: an 8-bit adder/subtractor (Al gate), a 256-bit shift register (Si gate), and a polycode generator (Al gate). The 256-bit shift register shows very little degradation after 1 x 10/sup 6/ rads (Si), with an increase from 1.9V to 2.9V in minimum operating voltage, a decrease of about 20% in maximum frequency, and little or no change in quiescent current. The p-channel thresholds increase from -0.9V to -1.3V, while the n-channel thresholds decrease from 1.05 to 0.23V, and the n-channel leakage remains below 1nA/mil. Excellent hardening results were also obtained on the polycode generator circuit. Ten circuits were irradiated to 1 x 10/sup 6/ rads (Si), and all continued to function well, with an increase in minimum power supply voltage from 2.85V to 5.85V and an increase in quiescent current by a factor of about 2. Similar hardening results were obtained on the 8-bit adder, with the minimum power supply voltage increasing from 2.2V to 4.6V and the add time increasing from 270 to 350 nsec after 1 x 10/sup 6/ rads (Si). These results show that large CMOS/SOS circuits can be hardened to above 1 x 10/sup 6/ rads (Si) with either the Si gate or Al gate technology. The paper also discusses the relative advantages of the Si gate versus the Al gate technology.
- OSTI ID:
- 7107317
- Journal Information:
- IEEE Trans. Nucl. Sci.; (United States), Journal Name: IEEE Trans. Nucl. Sci.; (United States) Vol. NS-23:6; ISSN IETNA
- Country of Publication:
- United States
- Language:
- English
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Instruments
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46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
ELECTRONIC CIRCUITS
FABRICATION
HARDENING
INTEGRATED CIRCUITS
MICROELECTRONIC CIRCUITS
MOS TRANSISTORS
PERFORMANCE
PHYSICAL RADIATION EFFECTS
RADIATION EFFECTS
RADIATION HARDENING
SEMICONDUCTOR DEVICES
TRANSISTORS