Radiation-tolerant 50MHz bulk CMOS VLSI circuits utilizing radiation-hard structure NMOS transistors
A radiation-tolerant, high speed, bulk CMOS VLSI circuit design, utilizing a new NMOS structure, has been investigated, based on ..gamma..-ray irradiation experimental results for 2 ..mu..m shift registers. By utilizing 60-bit clocked gate and transfer gate static shift register circuits, the usefulness of radiation-hard NMOS structure and circuit design parameter optimization has been confirmed experimentally, showing 50 MHZ operation CMOS circuits at 5 V supply voltage after 1 x 10/sup 5/ rads (Si) irradiation. The limitations of dynamic circuits in radiation-tolerant circuit designs have also been shown, using 120-bit dynamic shift register circuits. Based on the above results, radiation-tolerant, high-performance, bulk CMOS VLSI circuit designs are discussed.
- Research Organization:
- Semiconductor Device Engineering Lab., Research and Development Center, Toshiba Corp., 1, Komukai-Toshiba-cho, Saiwai-ku, Kawasaki 210
- OSTI ID:
- 5011956
- Journal Information:
- IEEE Trans. Nucl. Sci.; (United States), Journal Name: IEEE Trans. Nucl. Sci.; (United States) Vol. NS-33:5; ISSN IETNA
- Country of Publication:
- United States
- Language:
- English
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420800 -- Engineering-- Electronic Circuits & Devices-- (-1989)
440200* -- Radiation Effects on Instrument Components
Instruments
or Electronic Systems
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
CIRCUIT THEORY
DESIGN
ELECTRIC POTENTIAL
ELECTROMAGNETIC RADIATION
ELECTRONIC CIRCUITS
FREQUENCY RANGE
GAMMA RADIATION
HARDENING
INTEGRATED CIRCUITS
IONIZING RADIATIONS
IRRADIATION
MHZ RANGE
MHZ RANGE 01-100
MICROELECTRONIC CIRCUITS
MOS TRANSISTORS
OPTIMIZATION
PERFORMANCE
PHYSICAL RADIATION EFFECTS
RADIATION EFFECTS
RADIATION HARDENING
RADIATIONS
RESEARCH PROGRAMS
SEMICONDUCTOR DEVICES
TRANSISTORS
WAVELENGTHS