CMOS shift register circuits for radiation-tolerant VLSI's

Journal Article · Mon Oct 01 04:00:00 EDT 1984 · IEEE Trans. Nucl. Sci.; (United States)

DOI:https://doi.org/10.1109/TNS.1984.4333436· OSTI ID:6031631

Hatano, H; Naruke, K; Sakaue, K

A radiation-tolerant VLSI circuits investigation has been carried out using CMOS/SOS shift registers. Static and dynamic circuit performance degradation is discussed, based on MOS FET parameter shifts due to radiation effects, utilizing ..gamma..-ray irradiation and SPICE simulation. Functionality, after radiation doses in excess of 10/sup 5/ rad (Si), is shown for circuits fabricated by radiation-hardened process. Radiation-tolerance superiority of clocked gate CMOS (C/sup 2/MOS) shift register circuits to transfer gate shift register circuits is discussed, placing emphasis mainly on radiation-bias effects. Based on the above results, the C/sup 2/MOS is proposed for use in radiation-tolerant SOS VLSI circuits.

• Research Organization: Semiconductor Device Engineering Laboratory, Toshiba Corporation, 1 Komukai-Toshibacho, Saiwai-ku, Kawasaki 210
• OSTI ID: 6031631
• Journal Information: IEEE Trans. Nucl. Sci.; (United States), Journal Name: IEEE Trans. Nucl. Sci.; (United States) Vol. NS-31:5; ISSN IETNA
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
420800* -- Engineering-- Electronic Circuits & Devices-- (-1989)
440200 -- Radiation Effects on Instrument Components
Instruments
or Electronic Systems
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
DOSES
ELECTRONIC CIRCUITS
FABRICATION
FIELD EFFECT TRANSISTORS
HARDENING
INTEGRATED CIRCUITS
IRRADIATION
MICROELECTRONIC CIRCUITS
MOS TRANSISTORS
MOSFET
PHYSICAL RADIATION EFFECTS
RADIATION DOSES
RADIATION EFFECTS
RADIATION HARDENING
SEMICONDUCTOR DEVICES
TRANSISTORS