A Wide Temperature, Radiation Tolerant, CMOS-compatible Precision Voltage Reference for Extreme Environment Instrumentation Systems
- The University of Tennessee
- University of Tennessee, Knoxville (UTK)
- Triad Semiconductor
- United States Air Force, Department of Defense
- ORNL
Many design techniques have been incorporated into modern CMOS design practices to improve radiation tolerance of integrated circuits. Annular-gate NMOS structures have been proven to be significantly more radiation tolerant than the standard straight-gate variety. Many circuits can be designed using the annular-gate NMOS and the inherently radiation tolerant PMOS. Band-gap reference circuits, however, typically require p-n junction diodes. These p-n junction diodes are the dominating factor in radiation degradation in band-gap reference circuits. This paper proposes a different approach to band-gap reference design to alleviate the radiation susceptibility presented by the p-n junction diodes.
- Research Organization:
- Oak Ridge National Laboratory (ORNL)
- Sponsoring Organization:
- USDOE
- DOE Contract Number:
- AC05-00OR22725
- OSTI ID:
- 1089235
- Journal Information:
- IEEE Transactions on Nuclear Science, Journal Name: IEEE Transactions on Nuclear Science Journal Issue: 3 Vol. 60; ISSN 0018-9499
- Country of Publication:
- United States
- Language:
- English
Similar Records
A radiation-hardened 10K-gate CMOS gate array
Method for making a CMOS circuit having a reduced tendency to latch by controlling the band-gap of source and drain regions