Transient radiation hardening of CMOS LSI and VLSI memory circuits
Conference
·
OSTI ID:6888553
Transient radiation upset in CMOS LSI and VLSI memory circuits has been studied by computer simulation. A new type of upset mechanism is identified and hardening schemes are proposed.
- Research Organization:
- North Carolina State Univ., Raleigh (USA)
- DOE Contract Number:
- AC04-76DP00789
- OSTI ID:
- 6888553
- Report Number(s):
- SAND-84-7120C; CONF-840731-1; ON: DE84009492
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
42 ENGINEERING
420800* -- Engineering-- Electronic Circuits & Devices-- (-1989)
440200 -- Radiation Effects on Instrument Components
Instruments
or Electronic Systems
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
COMPUTERIZED SIMULATION
ELECTRONIC CIRCUITS
HARDENING
MEMORY DEVICES
PHYSICAL RADIATION EFFECTS
RADIATION EFFECTS
RADIATION HARDENING
SEMICONDUCTOR DEVICES
SEMICONDUCTOR STORAGE DEVICES
SIMULATION
420800* -- Engineering-- Electronic Circuits & Devices-- (-1989)
440200 -- Radiation Effects on Instrument Components
Instruments
or Electronic Systems
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
COMPUTERIZED SIMULATION
ELECTRONIC CIRCUITS
HARDENING
MEMORY DEVICES
PHYSICAL RADIATION EFFECTS
RADIATION EFFECTS
RADIATION HARDENING
SEMICONDUCTOR DEVICES
SEMICONDUCTOR STORAGE DEVICES
SIMULATION