Transient radiation upset simulations of CMOS memory circuits

Journal Article · Fri Nov 30 23:00:00 EST 1984 · IEEE Trans. Nucl. Sci.; (United States)

DOI:https://doi.org/10.1109/TNS.1984.4333507· OSTI ID:5844428

Massengill, L W; Diehl-Hagle, S E

A computer simulation technique has identified and modeled a dominant mechanism for transient ionizing radiation induced logic upset in certain CMOS integrated circuits. This mechanism, termed 'rail span collapse' here, has accounted for the discrepancy between simulated upsets of these circuits using only local radiation induced photocurrents and the experimentally observed upset dose-rate levels.

• Research Organization: Department of Electrical and Computer Engineering, North Carolina State University, Raleigh, NC 27695-7911
• OSTI ID: 5844428
• Journal Information: IEEE Trans. Nucl. Sci.; (United States), Journal Name: IEEE Trans. Nucl. Sci.; (United States) Vol. NS-31:6; ISSN IETNA
• Country of Publication: United States
• Language: English

Related Subjects

440200* -- Radiation Effects on Instrument Components
Instruments
or Electronic Systems
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
COMPUTERIZED SIMULATION
CURRENTS
DOSE RATES
ELECTRIC CURRENTS
ELECTRONIC CIRCUITS
FAILURES
INTEGRATED CIRCUITS
IONIZING RADIATIONS
MEMORY DEVICES
MICROELECTRONIC CIRCUITS
MOS TRANSISTORS
PHOTOCURRENTS
PHYSICAL RADIATION EFFECTS
RADIATION EFFECTS
RADIATIONS
SEMICONDUCTOR DEVICES
SEMICONDUCTOR STORAGE DEVICES
SIMULATION
TRANSIENTS
TRANSISTORS