Transient radiation upset simulations of CMOS memory circuits
Conference
·
OSTI ID:6666016
A computer simulation technique has identified and modeled a dominant mechanism for transient ionizing radiation induced logic upset in certain CMOS integrated circuits. This mechanism, termed rail span collapse here, has accounted for the discrepancy between simulated upsets of these circuits using only local radiation induced photocurrents and the experimentally observed upset dose-rate levels.
- Research Organization:
- North Carolina State Univ., Raleigh (USA). Dept. of Electrical and Computer Engineering
- DOE Contract Number:
- AC04-76DP00789
- OSTI ID:
- 6666016
- Report Number(s):
- SAND-84-1555C; CONF-840712-7; ON: DE84014985
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
440200* -- Radiation Effects on Instrument Components
Instruments
or Electronic Systems
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
COMPUTERIZED SIMULATION
CURRENTS
ELECTRIC CURRENTS
MEMORY DEVICES
PHOTOCURRENTS
PHYSICAL RADIATION EFFECTS
RADIATION EFFECTS
SEMICONDUCTOR DEVICES
SEMICONDUCTOR STORAGE DEVICES
SIMULATION
Instruments
or Electronic Systems
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
COMPUTERIZED SIMULATION
CURRENTS
ELECTRIC CURRENTS
MEMORY DEVICES
PHOTOCURRENTS
PHYSICAL RADIATION EFFECTS
RADIATION EFFECTS
SEMICONDUCTOR DEVICES
SEMICONDUCTOR STORAGE DEVICES
SIMULATION