Factors contributing to CMOS static RAM upset
Phenomena contributing to transient radiation induced static RAM (SRAM) cell upset integrated circuits (ICs) include rail span collapse, dynamic FET threshold voltage shifts, photo currents internal to the RAM cell, secondary photo currents, and lateral variations in silicon surface potential. Of these phenomena, it is found that the major contributors are rail span collapse and internal cell photo currents. In p-well CMOS processes with Vdd connected to the substrate, rail span collapse causes the RAM cell ground node to float up towards the Vdd node. The low-gate node, connected to ground through the on n-channel transistor, floats up towards the high gate node. The reduction in potential between the high and low gate nodes makes it easier for photo currents from n- and p-channel drain regions to upset the cell state.
- Research Organization:
- Sandia National Labs., Albuquerque, NM (USA)
- DOE Contract Number:
- AC04-76DP00789
- OSTI ID:
- 5580522
- Report Number(s):
- SAND-86-1650C; CONF-860706-15; ON: DE86013309
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
420800 -- Engineering-- Electronic Circuits & Devices-- (-1989)
440200* -- Radiation Effects on Instrument Components
Instruments
or Electronic Systems
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
ELECTRONIC CIRCUITS
ELEMENTS
IONIZING RADIATIONS
IRRADIATION
LOGIC CIRCUITS
PHYSICAL RADIATION EFFECTS
RADIATION EFFECTS
RADIATIONS
SEMIMETALS
SILICON