Analysis of transient radiation upset in a 2K SRAM
Conference
·
OSTI ID:5328788
Experimental characterization of the effects of power supply interconnect resistance on the transient radiation induced upset level of a 2K SRAM and correlations with rail span collapse simulations are presented. The results show that the dose rate upset threshold increases if columns of RAM cells are isolated from the V/sub SS/ supply grid. The magnitude of this increase is predicted well by computer simulations.
- Research Organization:
- North Carolina State Univ., Raleigh (USA); Sandia National Labs., Albuquerque, NM (USA)
- DOE Contract Number:
- AC04-76DP00789
- OSTI ID:
- 5328788
- Report Number(s):
- SAND-85-1646C; CONF-850711-15; ON: DE85016818
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
440200* -- Radiation Effects on Instrument Components
Instruments
or Electronic Systems
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
COMPUTERIZED SIMULATION
MEMORY DEVICES
PHYSICAL RADIATION EFFECTS
RADIATION EFFECTS
SEMICONDUCTOR DEVICES
SEMICONDUCTOR STORAGE DEVICES
SIMULATION
TESTING
Instruments
or Electronic Systems
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
COMPUTERIZED SIMULATION
MEMORY DEVICES
PHYSICAL RADIATION EFFECTS
RADIATION EFFECTS
SEMICONDUCTOR DEVICES
SEMICONDUCTOR STORAGE DEVICES
SIMULATION
TESTING