Factors contributing to static RAM cell transient upset
Conference
·
OSTI ID:5847089
Rail Span Collapse is proposed to be the dominant transient upset mechanism in CMOS static random access memories. This paper examines the many factors contributing to RAM cell upset and comments on the strengths and weaknesses of the rail span model.
- Research Organization:
- Sandia National Labs., Albuquerque, NM (USA)
- DOE Contract Number:
- AC04-76DP00789
- OSTI ID:
- 5847089
- Report Number(s):
- SAND-86-0341C; CONF-860706-9; ON: DE86007710
- Country of Publication:
- United States
- Language:
- English
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