CMOS/SOS RAM transient radiation upset and ``inversion`` effect investigation

Journal Article · Sat Nov 30 23:00:00 EST 1996 · IEEE Transactions on Nuclear Science

DOI:https://doi.org/10.1109/23.556850· OSTI ID:443036

Nikiforov, A Y; Poljakov, I V ^[1]

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1. Specialized Electronic Systems, Moscow (Russian Federation)

The Complementary Metal-Oxide-Semiconductor/Silicon-on-Sapphire Random Access Memory (CMOS/SOS RAM) transient upset and inversion effect were investigated with pulsed laser, pulsed voltage generator and low-intensity light simulators. It was found that the inversion of information occurs due to memory cell photocurrents simultaneously with the power supply voltage drop transfer to memory cells outputs.

• OSTI ID: 443036
• Report Number(s): CONF-960773--
• Journal Information: IEEE Transactions on Nuclear Science, Journal Name: IEEE Transactions on Nuclear Science Journal Issue: 6 Vol. 43; ISSN 0018-9499; ISSN IETNAE
• Country of Publication: United States
• Language: English

Related Subjects

44 INSTRUMENTATION
INCLUDING NUCLEAR AND PARTICLE DETECTORS
ELECTRICAL PROPERTIES
EXPERIMENTAL DATA
IONIZING RADIATIONS
PHYSICAL RADIATION EFFECTS
POWER SUPPLIES
SEMICONDUCTOR STORAGE DEVICES
TRANSIENTS