Test CMOS/SOS RAM for transient radiation upset comparative research and failure analysis

Journal Article · Thu Nov 30 23:00:00 EST 1995 · IEEE Transactions on Nuclear Science

DOI:https://doi.org/10.1109/23.489264· OSTI ID:203741

Nikiforov, A Y; Poljakov, I V ^[1]

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1. Specialized Electronic Systems, Moscow (Russian Federation)

The test Complementary Metal-Oxide-Semiconductor/Silicon-on-Sapphire Random Access Memory (CMOS/SOS RAM) with eight types of memory cells was designed and tested at high dose rates with a flash X-ray machine and laser simulator. The memory cell (MC) design with additional transistors and RC-chain was found to be upset free up to 2 {times} 10{sup 12} rad(Si)/s. An inversion effect was discovered in which almost 100% logic upset was observed in poorly protected memory cell arrays at very high dose rates.

• OSTI ID: 203741
• Report Number(s): CONF-950716--
• Journal Information: IEEE Transactions on Nuclear Science, Journal Name: IEEE Transactions on Nuclear Science Journal Issue: 6Pt1 Vol. 42; ISSN 0018-9499; ISSN IETNAE
• Country of Publication: United States
• Language: English

Related Subjects

44 INSTRUMENTATION
INCLUDING NUCLEAR AND PARTICLE DETECTORS
COMPARATIVE EVALUATIONS
LASER RADIATION
PERFORMANCE TESTING
PHYSICAL RADIATION EFFECTS
RADIATION DOSES
RESEARCH PROGRAMS
SEMICONDUCTOR STORAGE DEVICES
X RADIATION