Radiation-hardened VLSI technology
Conference
·
OSTI ID:6006795
A 2..mu..m technology for producing LSI and VLSI parts hardened to megarad radiation levels has been developed and implemented on a single-event-upset-free 16K static CMOS RAM. Key process features and technology trade-offs are discussed.
- Research Organization:
- Sandia National Labs., Albuquerque, NM (USA)
- DOE Contract Number:
- AC04-76DP00789
- OSTI ID:
- 6006795
- Report Number(s):
- SAND-83-0690C; CONF-830714-1; ON: DE83008908
- Country of Publication:
- United States
- Language:
- English
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