Comparison of analytical models and experimental results for single-event upset in CMOS SRAMs
In an effort to design fully radiation-hardened memories for satellite and deep-space applications, a 16K and a 2K CMOS static RAM were modeled for single-particle upset during the design stage. The modeling resulted in the addition of a hardening feedback resistor in the 16K remained tentatively unaltered. Subsequent experiments, using the Lawrence Berkeley Laboratories' 88-inch cyclotron to accelerate krypton and oxygen ions, established an upset threshold for the 2K and the 16K without resistance added, as well as a hardening threshold for the 16K with feedback resistance added. Results for the 16K showed it to be hardenable to the higher level than previously published data for other unhardened 16K RAMs. The data agreed fairly well with the modeling results; however, a close look suggests that modification of the simulation methodology is required to accurately predict the resistance necessary to harden the RAM cell.
- Research Organization:
- Sandia National Labs., Albuquerque, NM (USA); North Carolina State Univ., Raleigh (USA)
- DOE Contract Number:
- AC04-76DP00789
- OSTI ID:
- 5988013
- Report Number(s):
- SAND-83-1433C; CONF-830714-6; ON: DE83013990
- Country of Publication:
- United States
- Language:
- English
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420800 -- Engineering-- Electronic Circuits & Devices-- (-1989)
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Instruments
or Electronic Systems
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
CHARGE COLLECTION
CHARGED PARTICLES
COMPUTERIZED SIMULATION
ELECTRICAL EQUIPMENT
EQUIPMENT
IONS
KRYPTON IONS
MATHEMATICAL MODELS
MEMORY DEVICES
OXYGEN IONS
PHYSICAL RADIATION EFFECTS
RADIATION EFFECTS
RESISTORS
SEMICONDUCTOR DEVICES
SEMICONDUCTOR STORAGE DEVICES
SIMULATION