Single event upset rate estimates for a 16-K CMOS SRAM
A radiation-hardened 16-K CMOS SRAM has been developed for satellite and deep space applications. The RAM memory cell was modeled to predict the critical charge, necessary for single-particle upset, as a function of temperature, total dose, and hardening feedback resistance. Laboratory measurements of the single event cross section and effective funnel length were made using the Lawrence Berkeley Laboratory's 88-inch cyclotron to generate high energy krypton ions. The combination of modeled and measured parameters permitted estimation of the upset rate for the ramcell, and the mean-time-to-failure for a 512-K word, 22-bit memory system employing error detection and correction circuits while functioning in the Adam's ''90% worst case'' cosmic ray environment.
- Research Organization:
- Sandia National Labs., Albuquerque, NM (USA)
- DOE Contract Number:
- AC04-76DP00789
- OSTI ID:
- 5619962
- Report Number(s):
- SAND-85-0134C; CONF-850711-1; ON: DE85006976
- Country of Publication:
- United States
- Language:
- English
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Instruments
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46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
CHARGED PARTICLES
COMPUTERIZED SIMULATION
COSMIC RADIATION
ERRORS
HARDENING
IONIZING RADIATIONS
IONS
KRYPTON IONS
MEMORY DEVICES
PHYSICAL RADIATION EFFECTS
RADIATION EFFECTS
RADIATION HARDENING
RADIATIONS
RELIABILITY
SEMICONDUCTOR DEVICES
SEMICONDUCTOR STORAGE DEVICES
SIMULATION