Single-event upset rate estimates for a 16-K CMOS (complementary metal oxide semiconductor) SRAM (static random access memory). Technical report

Technical Report · Tue Sep 30 00:00:00 EDT 1986

OSTI ID:6856630

Browning, J S; Koga, R; Kolasinski, W A

A radiation-hardened 16K CMOS SRAM was developed for satellite and deep space applications. The RAM memory cell was modeled to predict the critical charge, necessary for single-particle upset, and a function of temperature, total dose, and hardening feedback resistance. Laboratory measurements of the single-event cross section and effective funnel length were made using the Lawrence Berkeley Laboratory's 88-inch cyclotron to generate high energy krypton ions. The combination of modeled and measured parameters permitted estimation of the upset rate for the RAM cell, and the mean-time-to-failure for a 512-K word, 22-bit memory system employing error detection and correction circuits while functioning in the Adam's 90% worst-case cosmic ray environment. This report is presented in the form of a worst tutorial review, summarizing the results of substantial research efforts within the single event community.

• Research Organization: Aerospace Corp., El Segundo, CA (USA). Space Sciences Lab.
• OSTI ID: 6856630
• Report Number(s): AD-A-176857/1/XAB; TR-0086(6940-05)-10
• Country of Publication: United States
• Language: English

Related Subjects

440104 -- Radiation Instrumentation-- High Energy Physics Instrumentation
440200 -- Radiation Effects on Instrument Components
Instruments
or Electronic Systems
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
640101* -- Astrophysics & Cosmology-- Cosmic Radiation
71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
CHARGED PARTICLES
COSMIC RADIATION
CROSS SECTIONS
DETECTION
ERRORS
FEEDBACK
HARDENING
IONIZING RADIATIONS
IONS
KRYPTON IONS
MEASURING INSTRUMENTS
MEMORY DEVICES
PHYSICAL RADIATION EFFECTS
RADIATION DETECTORS
RADIATION EFFECTS
RADIATION HARDENING
RADIATIONS
SATELLITES
SEMICONDUCTOR DETECTORS