Complementary-symmetry/metal oxide semiconductor (CMOS) circuit hardening. Volume I. Silicon-on-sapphire (SOS) CMOS circuit fabrication and characterization. Final report, Feb 1973--Aug 1974
This report summarizes the results of Phase I of a three-phase program to develop and verify hardening techniques in Complementary-Symmetry/Metal Oxide Semiconductor (CMOS) Large Scale Integrated (LSI) circuits fabricated with Silicon-on-Sapphire (SOS) technology. The Phase I study examined, experimentally, the effects of threshold voltage shifts on the electrical performance and transient radiation response in basic CMOS/SOS circuits. Simple CMOS/SOS test circuits, including an inverter, a 2-input NAND gate and a 2-input NOR gate, were fabricated with a 5 x 5-matrix of p-channel and n-channel threshold voltages. Results of electrical measurements are reported which show the variations that can be expected in electrical operation of these circuits, arising from the matrix of threshold voltage combinations. These threshold voltages can result from exposure to ionizing radiation or instability in the gate insulator material. Results of transient radiation measurements are reported which show the transient failure levels that can be expected in CMOS/SOS circuits and the significance of different threshold voltage combinations and sapphire photoresistive effects on the transient radiation hardness.
- Research Organization:
- Rockwell International Corp., Anaheim, Calif. (USA). Electronics Research Div.
- OSTI ID:
- 7347521
- Report Number(s):
- AD-A-021643
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
360605* -- Materials-- Radiation Effects
ALUMINIUM COMPOUNDS
ALUMINIUM OXIDES
CHALCOGENIDES
CORUNDUM
ELECTRONIC CIRCUITS
ELEMENTS
FIELD EFFECT TRANSISTORS
HARDENING
INTEGRATED CIRCUITS
MICROELECTRONIC CIRCUITS
MINERALS
OXIDES
OXYGEN COMPOUNDS
PHYSICAL RADIATION EFFECTS
RADIATION EFFECTS
RADIATION HARDENING
SAPPHIRE
SEMICONDUCTOR DEVICES
SEMIMETALS
SILICON
TRANSISTORS