Low-pressure chemical vapor deposition of amorphous silicon photovoltaic devices. Annual technical progress report, 1 May 1984-30 April 1985

Technical Report · Sat Feb 01 04:00:00 EST 1986

DOI:https://doi.org/10.2172/5965186· OSTI ID:5965186

Baron, B. N.; Rocheleau, R. E.; Hegedus, S. S.

Intrinsic and doped a-Si:H films were deposited by low pressure chemical vapor deposition (CVD) for disilane. Intrinsic layers were deposited at growth rates as high as 50 A/s. A chemical reaction engineering model that quantitatively describes the CVD reactor behavior has been developed. CVD intrinsic material was characterized by measurements of impurities, optical band gap, photoconductivity, activation energy, diffusion length, and density of states. Photovoltaic cells of the p-i-n type with efficiencies of 4% and 3.6% were fabricated using CVD intrinsic layers deposited at 1 A/s and 9 A/s, respectively. A maximum short-circuit current of 11 mA/cm/sup 2/ under 87.5 MW/cm/sup 2/ ELH illumination was obtained with boron-compensated CVD intrinsic material. Efficiency-limiting mechanisms in CVD cells were quantitatively analyzed and related to fundamental properties.

• Research Organization: Delaware Univ., Newark (USA). Inst. of Energy Conversion
• DOE Contract Number: AC02-83CH10093
• OSTI ID: 5965186
• Report Number(s): SERI/STR-211-2900; ON: DE86004435
• Country of Publication: United States
• Language: English

Related Subjects

14 SOLAR ENERGY
140501* -- Solar Energy Conversion-- Photovoltaic Conversion
AMORPHOUS STATE
BORON
CHEMICAL COATING
CHEMICAL VAPOR DEPOSITION
DEPOSITION
DIRECT ENERGY CONVERTERS
EFFICIENCY
ELECTRIC CONDUCTIVITY
ELECTRICAL PROPERTIES
ELEMENTS
EQUIPMENT
FABRICATION
PHOTOELECTRIC CELLS
PHOTOVOLTAIC CELLS
PHYSICAL PROPERTIES
SEMIMETALS
SILICON
SILICON SOLAR CELLS
SOLAR CELLS
SOLAR EQUIPMENT
SURFACE COATING