Skip to main content
U.S. Department of Energy
Office of Scientific and Technical Information

Chemical vapor deposition of amorphous semiconductor films. Final subcontract report

Technical Report ·
OSTI ID:6133336
Chemical vapor deposition (CVD) from higher order silanes has been studied for fabricating amorphous hydrogenated silicon thin-film solar cells. Intrinsic and doped a-Si:H films were deposited in a reduced-pressure, tubular-flow reactor, using disilane feed-gas. Conditions for depositing intrinsic films at growth rates up to 10 A/s were identified. Electrical and optical properties, including dark conductivity, photoconductivity, activation energy, optical absorption, band-gap and sub-band-gap absorption properties of CVD intrinsic material were characterized. Parameter space for depositing intrinsic and doped films, suitable for device analysis, was identified.
Research Organization:
Delaware Univ., Newark (USA). Inst. of Energy Conversion
DOE Contract Number:
AC02-83CH10093
OSTI ID:
6133336
Report Number(s):
SERI/STR-211-2522; ON: DE85002917
Country of Publication:
United States
Language:
English