Photochemical vapor deposition of amorphous silicon photovoltaic devices. Semiannual subcontract report, 1 May 1985-31 October 1985

Technical Report · Sun Jun 01 00:00:00 EDT 1986

DOI:https://doi.org/10.2172/5439007· OSTI ID:5439007

Baron, B. N.; Rocheleau, R. E.; Hegedus, S. S.

Intrinsic, p-type, and n-type hydrogenated amorphous silicon thin-films have been deposited by mercury-sensitized photochemical vapor deposition (photo-CVD) from disilane. The photochemical reactor design includes two chambers separated by a movable uv-transparent Teflon curtain to eliminate deposition on the reactor window. Glass/TCO/p-i-n/metal photovoltaic devices were fabricated by photo-CVD. The efficiency at 87.5 MW/cm/sup 2/(ELH) was 5.1%.

• Research Organization: Delaware Univ., Newark (USA). Inst. of Energy Conversion
• DOE Contract Number: AC02-83CH10093
• OSTI ID: 5439007
• Report Number(s): SERI/STR-211-2967; ON: DE86010729
• Country of Publication: United States
• Language: English

Related Subjects

14 SOLAR ENERGY
36 MATERIALS SCIENCE
CHEMICAL VAPOR DEPOSITION
PHOTOCHEMISTRY
SILICON
SILICON SOLAR CELLS
FABRICATION
AMORPHOUS STATE
CHEMICAL REACTORS
EFFICIENCY
SILANES
THIN FILMS
CHEMICAL COATING
CHEMISTRY
DEPOSITION
DIRECT ENERGY CONVERTERS
ELEMENTS
EQUIPMENT
FILMS
HYDRIDES
HYDROGEN COMPOUNDS
ORGANIC COMPOUNDS
ORGANIC SILICON COMPOUNDS
PHOTOELECTRIC CELLS
PHOTOVOLTAIC CELLS
SEMIMETALS
SILICON COMPOUNDS
SOLAR CELLS
SOLAR EQUIPMENT
SURFACE COATING
140501* - Solar Energy Conversion- Photovoltaic Conversion
360601 - Other Materials- Preparation & Manufacture