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Novel photochemical vapor deposition reactor for amorphous silicon solar cell deposition

Journal Article · · Appl. Phys. Lett.; (United States)
DOI:https://doi.org/10.1063/1.98592· OSTI ID:6511250
A novel photochemical vapor deposition (photo-CVD) reactor having a flexible ultraviolet-transparent Teflon curtain and a secondary gas flow to eliminate deposition on the window has been used to deposit amorphous silicon films and p-i-n solar cells. The background levels of atmospheric contaminants (H/sub 2/O, CO/sub 2/, N/sub 2/) depend strongly on the vacuum procedures but not on the presence of a Teflon curtain in the reactor. Intrinsic films with a midgap density of states of 3 x 10/sup 15/ eV/sup -1/ cm/sup -3/ and all-photo-CVD pin solar cells with efficiencies of 8.5% have been deposited.
Research Organization:
Institute of Energy Conversion, University of Delaware, Newark, Delaware 19716
OSTI ID:
6511250
Journal Information:
Appl. Phys. Lett.; (United States), Journal Name: Appl. Phys. Lett.; (United States) Vol. 51:2; ISSN APPLA
Country of Publication:
United States
Language:
English

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