Photochemical vapor deposition of amorphous silicon photovoltaic devices: Annual subcontract report, 1 May 1985-30 April 1986
Intrinsic, p-type, and n-type a-Si:H and p-type a-SiC:H thin-films have been deposited by Hg-sensitized photochemical vapor depositions (photo-CVD) from disilane. The photochemical reactor design includes two chambers separated by a movable uv-transparent Teflon curtain, which eliminates deposition on the reactor window. Photovoltaic devices of the type glass/TCO/p-i-n/metal were fabricated by photo-CVD. The device efficiency obtained at 87.5 mW/cm/sup 2/ and ELH illumination was 6.4%.
- Research Organization:
- Delaware Univ., Newark (USA). Inst. of Energy Conversion; Solar Energy Research Inst., Golden, CO (USA)
- DOE Contract Number:
- AC02-83CH10093
- OSTI ID:
- 6587014
- Report Number(s):
- SERI/STR-211-3114; ON: DE87001145
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
14 SOLAR ENERGY
140501* -- Solar Energy Conversion-- Photovoltaic Conversion
AMORPHOUS STATE
CHEMICAL COATING
CHEMICAL VAPOR DEPOSITION
DEPOSITION
DIRECT ENERGY CONVERTERS
EFFICIENCY
ELEMENTS
EQUIPMENT
FABRICATION
FILMS
PHOTOELECTRIC CELLS
PHOTOVOLTAIC CELLS
SEMIMETALS
SILICON
SILICON SOLAR CELLS
SOLAR CELLS
SOLAR EQUIPMENT
SURFACE COATING
THIN FILMS
140501* -- Solar Energy Conversion-- Photovoltaic Conversion
AMORPHOUS STATE
CHEMICAL COATING
CHEMICAL VAPOR DEPOSITION
DEPOSITION
DIRECT ENERGY CONVERTERS
EFFICIENCY
ELEMENTS
EQUIPMENT
FABRICATION
FILMS
PHOTOELECTRIC CELLS
PHOTOVOLTAIC CELLS
SEMIMETALS
SILICON
SILICON SOLAR CELLS
SOLAR CELLS
SOLAR EQUIPMENT
SURFACE COATING
THIN FILMS