Photochemical vapor deposition of amorphous silicon photovoltaic devices: Annual subcontract report, 1 May 1985-30 April 1986

Technical Report · Sun Feb 01 00:00:00 EST 1987

DOI:https://doi.org/10.2172/6587014· OSTI ID:6587014

Baron, B. N.; Rocheleau, R. E.; Hegedus, S. S.

Intrinsic, p-type, and n-type a-Si:H and p-type a-SiC:H thin-films have been deposited by Hg-sensitized photochemical vapor depositions (photo-CVD) from disilane. The photochemical reactor design includes two chambers separated by a movable uv-transparent Teflon curtain, which eliminates deposition on the reactor window. Photovoltaic devices of the type glass/TCO/p-i-n/metal were fabricated by photo-CVD. The device efficiency obtained at 87.5 mW/cm/sup 2/ and ELH illumination was 6.4%.

• Research Organization: Delaware Univ., Newark (USA). Inst. of Energy Conversion; Solar Energy Research Inst. (SERI), Golden, CO (United States)
• DOE Contract Number: AC02-83CH10093
• OSTI ID: 6587014
• Report Number(s): SERI/STR-211-3114; ON: DE87001145
• Resource Relation: Other Information: Portions of this document are illegible in microfiche products. Original copy available until stock is exhausted
• Country of Publication: United States
• Language: English

Related Subjects

14 SOLAR ENERGY
SILICON
CHEMICAL VAPOR DEPOSITION
SILICON SOLAR CELLS
FABRICATION
AMORPHOUS STATE
EFFICIENCY
THIN FILMS
CHEMICAL COATING
DEPOSITION
DIRECT ENERGY CONVERTERS
ELEMENTS
EQUIPMENT
FILMS
PHOTOELECTRIC CELLS
PHOTOVOLTAIC CELLS
SEMIMETALS
SOLAR CELLS
SOLAR EQUIPMENT
SURFACE COATING
140501* - Solar Energy Conversion- Photovoltaic Conversion