Dual-transistor method to determine. delta. V/sub ot/ and. delta. V/sub it/ for MOS devices
Conference
·
OSTI ID:5913875
It is shown how standard ..delta..Vth and mobility measurements made on otherwise identical n- and p-channel transistors can be combined to accurately estimate radiation-induced ..delta..V/sub ot/ and ..delta..V/sub it/. Applications of the method are described. 12 refs., 2 figs.
- Research Organization:
- Sandia National Labs., Albuquerque, NM (USA)
- DOE Contract Number:
- AC04-76DP00789
- OSTI ID:
- 5913875
- Report Number(s):
- SAND-89-0218C; CONF-890723-1; ON: DE89006725
- Country of Publication:
- United States
- Language:
- English
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