Dual-transistor method to determine threshold-voltage shifts due to oxide-trapped charge and interface traps in metal-oxide-semiconductor devices
A new technique is proposed to evaluate the radiation response of metal-oxide-semiconductor (MOS) transistors. The method requires that otherwise identical /ital n/- and /ital p/-channel transistors be irradiated under the same conditions. Using assumptions similar to those of widely accepted ''single-transistor'' methods, standard threshold-voltage and mobility measurements are combined to accurately estimate threshold-voltage shifts due to oxide-trapped charge and interface traps. This approach is verified for several MOS processes. The dual-transistor method can be applied to devices with much larger parasitic leakage, and at shorter times following a radiation pulse, than subthreshold current or charge-pumping techniques.
- Research Organization:
- Sandia National Laboratories, Albuquerque, New Mexico 87185(US)
- DOE Contract Number:
- AC04-76DP00789
- OSTI ID:
- 5884573
- Journal Information:
- Appl. Phys. Lett.; (United States), Journal Name: Appl. Phys. Lett.; (United States) Vol. 55:5; ISSN APPLA
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
420800* -- Engineering-- Electronic Circuits & Devices-- (-1989)
DATA
ELECTRONIC CIRCUITS
EXPERIMENTAL DATA
INFORMATION
INTEGRATED CIRCUITS
INTERFACES
MICROELECTRONIC CIRCUITS
NUMERICAL DATA
PHYSICAL RADIATION EFFECTS
RADIATION EFFECTS
SEMICONDUCTOR DEVICES
SPECTRAL RESPONSE
TRANSISTORS
TRAPS